| Item Name | Semiconductor Device Diode |
| Federal Supply Group (FSG) | Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC) | 5961 Semiconductor Devices and Associated Hardware |
| National Item Identification Number (NIIN) | 01-012-6693 (010126693) |
| NCB Code | USA (01) |
| Manufacturer | Micro Uspd Inc, Lockheed Martin Corporation, Raytheon Company, Quadri Corp, Trw Electronic Components, Honeywell International Inc, Military Specifications, Northrop Grumman Systems Corporation, Rockwell Collins Aerospace, Siemens Energy And Automation Inc, Dynalec Corporation, Inspektorat Wsparcia Sil Zbrojnych, Joint Army-Navy Specifications |
| Part Number | Manufacturer | Item Name | Cage Code | RFQ |
|---|---|---|---|---|
| UTG1240 | micro uspd inc | semiconductor device diode | 12969 | RFQ |
| 7906930-07 | lockheed martin corporation | semiconductor device diode | 90536 | RFQ |
| 167386-2 | raytheon company | semiconductor device diode | 49956 | RFQ |
| 1-0002-0055-21 | quadri corp | semiconductor device diode | 08642 | RFQ |
| PS41262 | trw electronic components | semiconductor device diode | 01281 | RFQ |
| 4031353-501 | honeywell international inc | semiconductor device diode | 07187 | RFQ |
| MIL-S-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| 7117072-1 | northrop grumman systems corporation | semiconductor device diode | 06481 | RFQ |
| 353-9019-300 | rockwell collins aerospace | semiconductor device diode | 95105 | RFQ |
| 808136-1 | raytheon company | semiconductor device diode | 96214 | RFQ |
| 53A0042 | siemens energy and automation inc | semiconductor device diode | 52025 | RFQ |
| JANTX1N5804 | military specifications | semiconductor device diode | 81349 | RFQ |
| MIL-PRF-19500/477 | military specifications | semiconductor device diode | 81349 | RFQ |
| 16101-058 | dynalec corporation | semiconductor device diode | 12763 | RFQ |
| 5961PL0835851 | inspektorat wsparcia sil zbrojnych | semiconductor device diode | 9009h | RFQ |
| JANTX1N5804 | joint army-navy specifications | semiconductor device diode | 81350 | RFQ |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.250 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.700 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.065 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MATT | MATERIAL | GLASS INCLOSURE |
| MATT | MATERIAL | SILICON SEMICONDUCTOR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS,BROCHURES,ETC.,THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS,INDUSTRY DIRECTORIES,AND SIMILAR TRADE PUBLICATIONS,REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/477 GOVERNMENT SPECIFICATION |
| Relevant Components for NSN - 5961-01-012-6693, 5961010126693 | ||||
| 5975-01-629-6429 (5975016296429) | 5998-01-305-2341 (5998013052341) | 5930-01-584-0809 (5930015840809) | 5962-01-210-3065 (5962012103065) | |
| 5905-00-175-4284 (5905001754284) | 5950-01-458-0903 (5950014580903) | 5920-01-490-0904 (5920014900904) | 5998-01-475-9891 (5998014759891) | |
| 5995-01-575-7529 (5995015757529) | 5962-01-310-7304 (5962013107304) | 5935-01-240-1468 (5935012401468) | 5995-01-374-0247 (5995013740247) | |
If You’re Ever Looking for NSN parts Or Have an Aircraft On Ground Situation, Don’t forget That We offer Competitive Pricing and Guaranteed On-Time Delivery.
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