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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-423-8127 Item PartTypeName: MICROCIRCUIT,MEMORY | 5962 | 014238127 | N | B | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
B | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
7546402P501 | 5 | 2 | 3 |
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.395 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.395 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.100 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 935.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | PACER DAWN |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CRTL | CRITICALITY CODE JUSTIFICATION | CBBL |
CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL, SCHOTTKY, TTL, 256 X 4 BIT RANDOM ACCESS MEMORY (RAM),, MONOLITHIC SILICON |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 2.1 VOLTS NOMINAL INPUT |
CZER | MEMORY DEVICE TYPE | RAM |
SPCL | SPECIAL TEST FEATURES | METHOD 1005, TEST CONDITION B,C, OR D |
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