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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-277-2620 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 012772620 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | G | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| RF2164 | 5 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC |
| ABHP | OVERALL LENGTH | 0.745 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.240 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 0.552 INCHES NOMINAL |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ASKA | COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM DRAIN TO GATE VOLTAGE ALL TRANSISTOR AND 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM DRAIN CURRENT ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| FEAT | SPECIAL FEATURES | CASE CONTAINS BERYLLIUM OXIDE-HANDLE AND DISPOSE IAW HAZMAT PROCEDURES |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TEST | TEST DATA DOCUMENT | 80063-A3012715 DRAWING (THIS IS THE BASIC GOVERNING DRAWING,SUCH AS A CONTRACTOR DRAWING,ORIGINAL EQUIPMENT MANUFACTURER DRAWING,ETC.; EXCLUDES ANY SPECIFICATION,STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 RIBBON |
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