If your operations demand part number 77A112799P1, an item produced by Lockheed Martin Corporation and listed with the description “Semiconductor Devic,” look no further than this page. At your convenience, you can complete the Request for Quote (RFQ) form below with details like your budget, desired quantity, and anticipated fulfillment timeline to receive customized procurement options on part number 77A112799P1. Our representatives will happily treat you to competitive pricing and swift lead times upon their receipt and review of a completed form, regularly responding in 15 minutes or less.
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If you are interested, be sure to explore our website further for related CAGE Code 03538 items or other various products manufactured by Lockheed Martin Corporation. We also present a catalog of all related FSC 5961 Semiconductor Devices and Associated Hardware parts that we currently carry for your perusal. Regardless of what you decide to purchase from us, we will work closely with you to provide dependable, authentic products while ensuring that we address every requirement possible. This being said, get started on requesting quotes for part number 77A112799P1 and any other NSN parts you need on Sky Forge Components to experience our unrivaled fulfillment services.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-01-372-8127 Item PartTypeName: SEMICONDUCTOR DEVICES,UNITIZED | 5961 | 013728127 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 77A112799P001 | 5 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 4TH TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 4TH TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 4TH TRANSIS |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 2ND TRANSISTOR |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CTRD | POWER RATING PER CHARACTERISTIC | 10.0 WATTS NOMINAL TOTAL POWER DISSIPATION 3RD TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 4TH TRANSISTOR |
| ABHP | OVERALL LENGTH | 0.375 INCHES NOMINAL |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
| ABMK | OVERALL WIDTH | 0.340 INCHES NOMINAL |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 2ND TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 2ND TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 2ND TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 3RD TRANSISTOR AND-4.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 3RD TRANSISTOR AND-60.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 3RD TRAN |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN 1ST TRANSISTOR AND 5.0 NOMINAL BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN 1ST TRANSISTOR AND 50.0 NOMINAL BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN 1ST TRANSIS |
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ASKA | COMPONENT NAME AND QUANTITY | 4 TRANSISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 3.00 AMPERES NOMINAL COLLECTOR CURRENT,DC ALL TRANSISTOR |
| CTRD | POWER RATING PER CHARACTERISTIC | 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION 1ST TRANSISTOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 9 PIN |
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