If your operations demand part number 1017B9060-1, an item produced by Northrop Grumman Systems Corporation and listed with the description “Semiconductor Device Set,” look no further than this page. At your convenience, you can complete the Request for Quote (RFQ) form below with details like your budget, desired quantity, and anticipated fulfillment timeline to receive customized procurement options on part number 1017B9060-1. Our representatives will happily treat you to competitive pricing and swift lead times upon their receipt and review of a completed form, regularly responding in 15 minutes or less.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-222-8467 Item PartTypeName: SEMICONDUCTOR DEVICE SET | 5961 | 012228467 | N | A | ||
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
A | A | 0 | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
A2H1375 | 2 | 1 | C | 9 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.050 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.055 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR ALL SEMICONDUCTOR DEVICE DIODE |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -10.0 MAXIMUM FORWARD VOLTAGE,DC ALL SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT,DC ALL SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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